smcj5.0a thru SMCJ188CA www.vishay.com vishay general semiconductor revision: 20-dec-11 1 document number: 89331 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount t rans z orb ? transient voltage suppressors devices for bi-direction applications for bi-directional use c or ca suffix (e.g. SMCJ188CA). electrical characteristics apply in both directions. features ? low profile package ? ideal for automated placement ? glass passivated chip junction ? available in uni-directional and bi-directional ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, and telecommunication. mechanical data case: do-214ab (smcj) molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 2 01 class 1a whisker test polarity: color band denotes cathode end notes (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal primary characteristics v wm 5.0 v to 188 v p ppm 1500 w i fsm (uni-directional only) 200 a t j max. 150 c do-214ab (smc) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak pulse power dissipa tion with a 10/1000 s waveform (fig. 1) p ppm (1)(2) 1500 w peak pulse current with a 10/1000 s waveform i ppm (1) see next table a peak forward surge current 8.3 ms sing le half sine-wave uni-directional only i fsm (2) 200 a power dissipation on infinite heatsink, t a = 50 c p d 6.5 w operating junction and storage temperature range t j , t stg - 55 to + 150 c
smcj5.0a thru SMCJ188CA www.vishay.com vishay general semiconductor revision: 20-dec-11 2 document number: 89331 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: t p ? 50 ms (2) surge current waveform per fi g. 3 and derate per fig. 2 (3) for bi-directional types having v wm of 10 v and less, the i d limit is doubled (4) all terms and symbols are cons istent with ansi/ieee c62.35 (5) for the bi-directional smcj5.0ca, the maximum v br is 7.25 v (6) v f = 3.5 v at i f = 25 a (uni-dir ectional only) (+) underwriters laboratory recognition for the classification of protectors (qvgq2) under the ul standard for safety 497b and f ile number e136766 for both uni-directional and bi-directi onal devices electrical characteristics (t a = 25 c unless otherwise noted) device type modified j bend lead device marking code breakdown voltage v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i d (a) (3) maximum peak pulse surge current i ppm (a) (2) maximum clamping voltage at i ppm v c (v) uni bi min. max. (+)smcj5.0a (5) gde gde 6.40 7.07 10 5.0 800 163.0 9.2 (+)smcj6.0a gdg gdg 6.67 7.37 10 6.0 800 145.6 10.3 (+)smcj6.5a gdk bdk 7.22 7.98 10 6.5 500 133.9 11.2 (+)smcj7.0a gdm gdm 7.78 8.60 10 7.0 200 125.0 12.0 (+)smcj7.5a gdp bdp 8.33 9.21 1.0 7.5 100 116.3 12.9 (+)smcj8.0a gdr bdr 8.89 9.83 1.0 8.0 50 110.3 13.6 (+)smcj8.5a gdt bdt 9.44 10.4 1.0 8.5 20 104.2 14.4 (+)smcj9.0a gdv bdv 10.0 11.1 1.0 9.0 10 97.4 15.4 (+)smcj10a gdx bdx 11.1 12.3 1.0 10 5.0 88.2 17.0 (+)smcj11a gdz gdz 12.2 13.5 1.0 11 5.0 82.4 18.2 (+)smcj12a gee bee 13.3 14.7 1.0 12 5.0 75.4 19.9 (+)smcj13a geg geg 14.4 15.9 1.0 13 1.0 69.8 21.5 (+)smcj14a gek bek 15.6 17.2 1.0 14 1.0 64.7 23.2 (+)smcj15a gem bem 16.7 18.5 1.0 15 1.0 61.5 24.4 (+)smcj16a gep gem 17.8 19.7 1.0 16 1.0 57.7 26.0 (+)smcj17a ger ger 18.9 20.9 1.0 17 1.0 54.3 27.6 (+)smcj18a get bet 20.0 22.1 1.0 18 1.0 51.4 29.2 (+)smcj20a gev bev 22.2 24.5 1.0 20 1.0 46.3 32.4 (+)smcj22a gex bex 24.4 26.9 1.0 22 1.0 42.3 35.5 (+)smcj24a gez bez 26.7 29.5 1.0 24 1.0 38.6 38.9 (+)smcj26a gfe bfe 28.9 31.9 1.0 26 1.0 35.6 42.1 (+)smcj28a gfg gfg 31.1 34.4 1.0 28 1.0 33.0 45.4 (+)smcj30a gfk bfk 33.3 36.8 1.0 30 1.0 31.0 48.4 (+)smcj33a gfm bfm 36.7 40.6 1.0 33 1.0 28.1 53.3 (+)smcj36a gfp bfp 40.0 44.2 1.0 36 1.0 25.8 58.1 (+)smcj40a gfr bfr 44.4 49.1 1.0 40 1.0 23.3 64.5 (+)smcj43a gft bft 47.8 52.8 1.0 43 1.0 21.6 69.4 (+)smcj45a gfv gfv 50.0 55.3 1.0 45 1.0 20.6 72.7 (+)smcj48a gfx gfx 53.3 58.9 1.0 48 1.0 19.4 77.4 (+)smcj51a gfz gfz 56.7 62.7 1.0 51 1.0 18.2 82.4 (+)smcj54a gge gge 60.0 66.3 1.0 54 1.0 17.2 87.1 (+)smcj58a ggg ggg 64.4 71.2 1.0 58 1.0 16.0 93.6 (+)smcj60a ggk ggk 66.7 73.7 1.0 60 1.0 15.5 96.8 (+)smcj64a ggm ggm 71.1 78.6 1.0 64 1.0 14.6 103 (+)smcj70a ggp ggp 77.8 86.0 1.0 70 1.0 13.3 113 (+)smcj75a ggr ggr 83.3 92.1 1.0 75 1.0 12.4 121 (+)smcj78a ggt ggt 86.7 95.8 1.0 78 1.0 11.9 126 (+)smcj85a ggv ggv 94.4 104 1.0 85 1.0 10.9 137 (+)smcj90a ggx ggx 100 111 1.0 90 1.0 10.3 146 (+)smcj100a ggz ggz 111 123 1.0 100 1.0 9.3 162 (+)smcj110a ghe ghe 122 135 1.0 110 1.0 8.5 177 (+)smcj120a ghg ghg 133 147 1.0 120 1.0 7.8 193 (+)smcj130a ghk ghk 144 159 1.0 130 1.0 7.2 209 (+)smcj150a ghm ghm 167 185 1.0 150 1.0 6.2 243 (+)smcj160a ghp ghp 178 197 1.0 160 1.0 5.8 259 (+)smcj170a ghr ghr 189 209 1.0 170 1.0 5.5 275
smcj5.0a thru SMCJ188CA www.vishay.com vishay general semiconductor revision: 20-dec-11 3 document number: 89331 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) mounted on minimum r ecommended pad layout ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - peak pulse power rating curve fig. 2 - pulse power or current vs. initial junction temperature fig. 3 - pulse waveform fig. 4 - typical junction capacitance thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance, junction to ambient r ? ja (1) 75 c/w typical thermal resistance, junction to lead r ? jl 15 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode smcj5.0a-m3/57t 0.211 57t 850 7" diam eter plastic tape and reel smcj5.0a-m3/9at 0.211 9at 3500 13" di ameter plastic tape and reel 0.1 1 10 100 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pad areas p ppm - peak pulse power (kw) t d - pulse width (s) 0.1 s 1.0 s 10 s 100 s 1.0 ms 10 ms 0 255075100 100 75 50 25 0 125 150 175 200 t j - initial temperature (c) peak pulse power (p pp ) or current (i pp ) derating in percentage, % 0 50 100 150 t r = 10 s peak value i ppm half value - i ppm i pp 2 t d 10/1000 s waveform as defined by r.e.a. 0 1.0 2.0 3.0 4.0 t - time (ms) i ppm - peak pulse current, % i rsm t j = 25 c pulse width (t d ) is defined as the point where the peak current decays to 50 % of i ppm 10 100 1000 10 000 20 000 10 1 100 400 uni-directional bi-directional t j = 25 c f = 1.0 mhz v sig = 50 mvp-p measured at zero bias v r , measured at stand-off voltage v wm c j - junction capacitance (pf) v wm - reverse stand-off voltage (v)
smcj5.0a thru SMCJ188CA www.vishay.com vishay general semiconductor revision: 20-dec-11 4 document number: 89331 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical transient thermal impedance fig. 6 - maximum non-repetitive forward surge current uni-directional only package outline dimensions in inches (millimeters) 0.1 1.0 10 100 0.001 0.01 0.1 10 1 100 1000 t p - pulse duration (s) transient thermal impedance (c/w) 1 10 100 10 100 200 t j = t j max. 8.3 ms single half sine-wave number of cycles at 60 hz peak forward surge current (a) 0.260 (6.60) 0.280 (7.11) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.008 (0.2) 0.305 (7.75) 0.320 (8.13) 0.220 (5.59) 0.246 (6.22) 0.079 (2.06) 0.103 (2.62) 0.114 (2.90) 0.126 (3.20) cathode band do-214ab (smc j-bend) 0.320 ref. 0.060 (1.52) min. mounting pad layout 0 (0) 0.126 (3.20) min. 0.185 (4.69) max.
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